NDS335N
MOSFET N-CH 20V 1.7A SUPERSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDS335N is an N-Channel MOSFET with a drain-source voltage (Vdss) of 20 V. This device features a continuous drain current (Id) of 1.7 A at 25°C and a maximum power dissipation of 500 mW (Ta). The Rds On is specified at a maximum of 110mOhm for an Id of 1.7 A and Vgs of 4.5 V. Gate charge (Qg) is a maximum of 9 nC at 4.5 V, and input capacitance (Ciss) is a maximum of 240 pF at 10 V. The NDS335N utilizes MOSFET technology and is supplied in a SOT-23-3 surface mount package. It is designed for operation across a temperature range of -55°C to 150°C (TJ). This component finds application in various electronic designs, including power management and switching circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 10 V |