NDS0610-G
FET -60V 10.0 MOHM SOT23Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's NDS0610-G is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 120mA at 25°C (Ta). The Rds On is specified at a maximum of 10 Ohms when driven by 10V with a gate-source voltage of 10V and a drain current of 500mA. With a maximum power dissipation of 360mW (Ta) and a gate charge of 2.5 nC at 10V, it is suitable for various power management and switching applications. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a compact SOT-23-3 package. This component is frequently utilized in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 79 pF @ 25 V |
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