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NDS0605-F169

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NDS0605-F169

MOSFET P-CH 60V SOT-23

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NDS0605-F169 is a P-Channel MOSFET designed for versatile applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 180mA at 25°C. Its surface mount SOT-23-3 package (TO-236-3, SC-59) is suitable for high-density board layouts. With a maximum power dissipation of 360mW (Ta), it offers efficient operation. The Rds On is specified at 5 Ohms maximum for an Id of 500mA and Vgs of 10V. Key parameters like gate charge (Qg) are 2.5 nC (max) at 10V, and input capacitance (Ciss) is 79 pF (max) at 25V. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in industries such as consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds79 pF @ 25 V

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