NDPL100N10BG
MOSFET N-CH 100V 100A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDPL100N10BG is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 100V. It offers a continuous drain current (Id) of 100A at 25°C (Ta) and a low on-resistance (Rds On) of 7.2mOhm at 50A, 15V. The device features a maximum junction temperature of 175°C and a power dissipation of 110W (Tc). It is housed in a TO-220-3 package for through-hole mounting. Key parameters include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 2950 pF at 50V. This component is suitable for applications in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 50 V |
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