NDP7060
MOSFET N-CH 60V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDP7060 is a robust N-Channel MOSFET designed for high-power applications. This component features a 60V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 13mOhm at 40A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Key electrical parameters include input capacitance (Ciss) of 3600pF at 25V and gate charge (Qg) of 115nC at 10V. The device operates across a wide temperature range of -65°C to 175°C (TJ) and is housed in a standard TO-220-3 through-hole package. This MOSFET is suitable for use in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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