NDP603AL
MOSFET N-CH 30V 25A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDP603AL is an N-Channel MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 25A at 25°C (Tc). The low on-resistance of 22mOhm at 25A and 10V gate-source voltage minimizes conduction losses. With a maximum power dissipation of 50W (Tc), it is suitable for power management solutions. The TO-220-3 package facilitates efficient heat dissipation and ease of mounting. Key parameters include a gate charge of 40 nC (Max) at 10V and input capacitance of 1100 pF (Max) at 15V. Operating temperature range is -65°C to 175°C (TJ). This component is widely utilized in industrial power supplies, automotive systems, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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