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NDP4060L

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NDP4060L

MOSFET N-CH 60V 15A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi NDP4060L is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 15 A at 25°C. With a maximum power dissipation of 50 W (Tc), it is suitable for demanding thermal environments. The on-resistance (Rds On) is specified at a maximum of 80 mOhm when operating at 15 A and 10 Vgs. Key parameters include a gate charge (Qg) of 17 nC (max) at 5 V and input capacitance (Ciss) of 600 pF (max) at 25 V. The device utilizes Metal Oxide technology and is packaged in a TO-220-3 through-hole configuration, commonly found in industrial, automotive, and consumer electronics power management systems. It supports gate-source voltages up to ±16V.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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