NDFPD1N150CG
MOSFET N-CH 1500V 100MA TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDFPD1N150CG N-Channel Power MOSFET in a TO-220-3 package. This component offers a Drain-to-Source Voltage (Vdss) of 1500 V and a continuous drain current (Id) of 100mA at 25°C (Ta). The Rds On is specified at a maximum of 150 Ohms when Id is 50mA and Vgs is 10V. Key parameters include a Gate Charge (Qg) of 4.2 nC (Max) at 10V and Input Capacitance (Ciss) of 80 pF (Max) at 30V. Maximum power dissipation is 2W (Ta) and 20W (Tc). This device is suitable for applications requiring high voltage switching and is commonly found in power supplies and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 150Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1500 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 30 V |
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