NDF11N50ZH
MOSFET N-CH 500V 12A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NDF11N50ZH is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 12A at 25°C, with a maximum power dissipation of 39W (Tc). The NDF11N50ZH offers a low On-Resistance (Rds On) of 520mOhm at 4.5A and 10V, facilitated by a Gate-Source Voltage (Vgs) drive of 10V. Key electrical characteristics include a maximum Gate Charge (Qg) of 69 nC at 10V and an input capacitance (Ciss) of 1645 pF at 25V. The device is housed in a TO-220-2 Full Pack package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
