NDF11N50ZG
MOSFET N-CH 500V 12A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NDF11N50ZG is a 500V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current capability of 12A (Tc) at 25°C and a maximum power dissipation of 39W (Tc). The NDF11N50ZG offers a low on-resistance of 520mOhm at 4.5A, 10V, with a gate threshold voltage (Vgs(th)) of 4.5V at 100µA. Key electrical parameters include a gate charge (Qg) of 69 nC at 10V and input capacitance (Ciss) of 1645 pF at 25V. The MOSFET operates within a temperature range of -55°C to 150°C and is housed in a TO-220FP package, facilitating through-hole mounting. Applications typically include power supplies, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
