NDF10N60ZH
MOSFET N-CH 600V 10A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF10N60ZH is a 600V N-Channel MOSFET designed for power switching applications. This component offers continuous drain current capability of 10A at 25°C (Tc) with a maximum power dissipation of 39W (Tc). The Rds On is specified at a maximum of 750mOhm at 5A and 10V gate drive. Key electrical characteristics include a Vgs(th) of 4.5V (max) at 100µA and a gate charge (Qg) of 68 nC at 10V. Input capacitance (Ciss) is 1645 pF at 25V. The NDF10N60ZH utilizes Metal Oxide technology and is housed in a TO-220-2 Full Pack package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This device is commonly found in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
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