NDF10N60ZG
MOSFET N-CH 600V 10A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF10N60ZG is a 600V N-Channel MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current (Id) of 10A at 25°C (Tc) and a maximum power dissipation of 39W (Tc). With a drain-to-source voltage (Vdss) of 600V and a low on-resistance (Rds On) of 750mOhm at 5A and 10V gate drive, the NDF10N60ZG offers excellent conduction characteristics. Key parameters include a gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 1645 pF at 25V. The MOSFET is housed in a TO-220FP package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This device finds application in areas such as power supplies, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
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