NDF08N60ZG
MOSFET N-CH 600V 8.4A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF08N60ZG is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 8.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 950mOhm at 3.5A and 10V gate drive. With a gate charge (Qg) of 39 nC (max) at 10V and input capacitance (Ciss) of 1140 pF (max) at 25V, this MOSFET is suitable for power switching applications. The device is packaged in a TO-220FP with a maximum power dissipation of 36W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This component finds application in various industries requiring high-voltage power conversion.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 25 V |
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