NDF08N50ZH
MOSFET N-CH 500V 8.5A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF08N50ZH is a 500 V N-Channel Power MOSFET designed for high-efficiency switching applications. With a continuous drain current (Id) of 8.5A at 25°C and a maximum power dissipation of 35W (Tc), this component is suited for demanding power conversion tasks. Its low on-resistance of 850mOhm at 10V and 3.6A, coupled with a gate charge of 46 nC at 10V, ensures efficient switching performance. The TO-220-2 Full Pack through-hole package facilitates robust thermal management. This MOSFET is utilized in various industries, including industrial power supplies and consumer electronics. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1095 pF @ 25 V |
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