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NDF06N60ZG

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NDF06N60ZG

MOSFET N-CH 600V 7.1A TO220FP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NDF06N60ZG is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 7.1 A at 25°C (Tc). The Rds On is specified at a maximum of 1.2 Ohms at 3 A and 10 V gate drive. The device offers a low gate charge of 47 nC at 10 V and an input capacitance (Ciss) of 1107 pF at 25 V. With a maximum power dissipation of 35 W (Tc), it is suitable for use in industrial power supplies, lighting, and motor control applications. The NDF06N60ZG is housed in a TO-220FP package, facilitating through-hole mounting. It operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.1A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1107 pF @ 25 V

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