NDF05N50ZH
MOSFET N-CH 500V 5.5A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF05N50ZH is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 5.5A at 25°C. With a maximum power dissipation of 30W (Tc) and an Rds On of 1.5Ohm at 2.2A and 10V, it offers efficient switching characteristics. The device is housed in a TO-220-2 Full Pack package for through-hole mounting. Key electrical parameters include a Gate Charge (Qg) of 28 nC at 10V and an input capacitance (Ciss) of 632 pF at 25V. This MOSFET is suitable for use in power supply units, lighting, and motor control systems. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 632 pF @ 25 V |
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