NDF04N60ZH
MOSFET N-CH 600V 4.8A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF04N60ZH is a 600 V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current capability of 4.8A at 25°C (Tc) and a maximum power dissipation of 30W (Tc). The Rds On is specified at 2 Ohm maximum at 2A and 10V Vgs. Key electrical parameters include a gate charge of 29 nC maximum at 10 V and an input capacitance of 640 pF maximum at 25 V. The device utilizes MOSFET technology and is housed in a TO-220-2 Full Pack through-hole package. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for power supply, industrial motor control, and lighting applications demanding robust performance and thermal management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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