NDF04N60ZG
MOSFET N-CH 600V 4.8A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF04N60ZG is a 600V N-Channel Power MOSFET designed for efficient switching applications. This device features a continuous drain current of 4.8A (Tc) at 25°C and a maximum power dissipation of 30W (Tc). The Rds(on) is specified at 2Ohm maximum for an Id of 2A with a Vgs of 10V. Key parameters include a gate charge (Qg) of 29 nC maximum at 10V and an input capacitance (Ciss) of 640 pF maximum at 25V. The threshold voltage (Vgs(th)) is 4.5V maximum. This MOSFET is housed in a TO-220FP package with a through-hole mounting type, suitable for demanding thermal environments. The operating temperature range is from -55°C to 150°C (TJ). This component is utilized in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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