NDF03N60ZH
MOSFET N-CH 600V 3.1A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF03N60ZH is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 3.1A (Tc) at 25°C and a maximum power dissipation of 27W (Tc). With a low on-resistance of 3.6 Ohms maximum at 1.2A and 10V gate drive, it offers reduced conduction losses. Key parameters include a gate charge of 18 nC at 10V and input capacitance of 372 pF at 25V. The TO-220-2 Full Pack through-hole package facilitates easy integration into standard PCB layouts. This MOSFET is suitable for use in industrial power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220-2 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V |
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