NDF02N60ZG
MOSFET N-CH 600V 2.4A TO220FPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDF02N60ZG is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 2.4 A at 25°C. With a maximum On-Resistance (Rds On) of 4.8 Ohms at 1 A and 10 V gate drive, it offers efficient power handling with a maximum power dissipation of 24 W at 25°C (Tc). The NDF02N60ZG utilizes MOSFET technology and is supplied in a TO-220FP package for through-hole mounting. Key parameters include a Gate Charge (Qg) of 10.1 nC at 10 V and Input Capacitance (Ciss) of 274 pF at 25 V. This device operates across a temperature range of -55°C to 150°C. It is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 25 V |
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