NDDP010N25AZT4H
MOSFET N-CH 250V 10A DPAK/TP-FAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDDP010N25AZT4H is a N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 10A at 25°C. With a maximum Rds(on) of 420mOhm at 5A and 10V gate drive, it offers efficient power handling. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, also known as DPAK/TP-FA. Key electrical characteristics include a gate charge (Qg) of 16nC at 10V and an input capacitance (Ciss) of 980pF at 20V. It supports a gate-source voltage (Vgs) range of ±30V and has a threshold voltage (Vgs(th)) of 4.5V at 1mA. The NDDP010N25AZT4H is rated for a maximum junction temperature of 150°C and offers power dissipation of 1W (Ta) and 52W (Tc). This MOSFET is commonly utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | DPAK/TP-FA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 20 V |
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