NDDP010N25AZ-1H
MOSFET N-CH 250V 10A IPAK/TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi N-Channel Power MOSFET, part number NDDP010N25AZ-1H, offers a 250V drain-source breakdown voltage and continuous drain current capability of 10A at 25°C ambient. This component features a maximum on-resistance of 420mOhm at 5A and 10V gate-source voltage. With a gate charge of 16 nC and input capacitance of 980 pF, it is designed for efficient switching applications. The TO-251-3 Short Leads, IPAK package allows for through-hole mounting and provides a maximum power dissipation of 1W (ambient) or 52W (case). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 20 V |
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