NDDL01N60Z-1G
MOSFET N-CH 600V 800MA IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDDL01N60Z-1G is a 600 V N-Channel MOSFET designed for high-voltage applications. Featuring a continuous drain current of 800mA (Ta) and a maximum power dissipation of 26W (Tc), this component is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum Rds On of 15 Ohm at 400mA and 10V, and a gate charge (Qg) of 4.9 nC @ 10 V. The input capacitance (Ciss) is a maximum of 92 pF @ 25 V, with a gate-source breakdown voltage of ±30V. The threshold voltage (Vgs(th)) is 4.5V @ 50µA. Typical applications for this MOSFET include power supply units, lighting, and industrial motor control. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 15Ohm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 92 pF @ 25 V |
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