NDD60N900U1T4G
MOSFET N-CH 600V 5.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N900U1T4G is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 5.7A at 25°C, this device offers robust performance. Its low on-resistance of 900mOhm at 2.5A and 10V gate drive voltage ensures efficient power delivery. The MOSFET boasts a maximum power dissipation of 74W (Tc) and a gate charge of 12 nC (max) at 10V. Packaged in a surface-mount DPAK (TO-252-3, DPAK), it is supplied on tape and reel. This component is suitable for use in power supply units, lighting, and industrial motor control applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 50 V |
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