NDD60N900U1-35G
MOSFET N-CH 600V 5.7A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDD60N900U1-35G is a 600V N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This device offers a continuous drain current of 5.7A at 25°C (Tc) and a maximum power dissipation of 74W (Tc). The Rds(on) is specified at 900mOhm when driven at 10V with a drain current of 2.5A. Key characteristics include a gate charge (Qg) of 12 nC (max) at 10V and input capacitance (Ciss) of 360 pF (max) at 50V. It features a threshold voltage (Vgs(th)) of 4V (max) at 250µA and a maximum gate-source voltage of ±25V. The operating temperature range is -55°C to 150°C (TJ). This component is frequently utilized in power supply, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 50 V |
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