NDD60N745U1T4G
MOSFET N-CH 600V 6.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N745U1T4G is a 600V N-Channel power MOSFET designed for high-efficiency switching applications. This device features a maximum continuous drain current of 6.6A (Tc) and a low on-resistance of 745mOhm at 3.25A and 10V gate drive. With a power dissipation capability of 84W (Tc) and a gate charge of 15 nC @ 10V, it offers excellent switching performance. The MOSFET utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component is suitable for use in power supply units, motor control, and industrial automation systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a gate-source voltage tolerance of ±25V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 745mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 50 V |
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