NDD60N745U1-35G
MOSFET N-CH 600V 6.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N745U1-35G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 6.6A at 25°C. With a maximum power dissipation of 84W at 25°C (Tc) and an Rds On of 745mOhm at 3.25A and 10V Vgs, it offers efficient switching performance. The Gate Charge (Qg) is 15 nC maximum at 10V, and the Input Capacitance (Ciss) is 440 pF maximum at 50V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). The onsemi NDD60N745U1-35G is commonly found in industrial power supplies and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 745mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 50 V |
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