NDD60N745U1-1G
MOSFET N-CH 600V 6.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N745U1-1G is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. Featuring a continuous drain current of 6.6A (Tc) and a maximum power dissipation of 84W (Tc), this component offers a low on-resistance of 745mOhm at 3.25A and 10V gate drive. The TO-251-3 Short Leads, IPAK package facilitates through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 440pF at 50V and a gate charge (Qg) of 15nC at 10V. This MOSFET is engineered for demanding sectors such as industrial power supplies, lighting, and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 745mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 50 V |
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