NDD60N550U1T4G
MOSFET N-CH 600V 8.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N550U1T4G is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 8.2A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). The Rds(On) is specified at 550mOhm maximum at 4A and 10V Vgs. Key parameters include a gate charge (Qg) of 18 nC at 10V and input capacitance (Ciss) of 540 pF at 50V. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ) and is suitable for use in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V |
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