NDD60N360U1T4G
MOSFET N-CH 600V 11A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N360U1T4G is a high-voltage N-Channel MOSFET designed for demanding power applications. Featuring a Drain-to-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 11 A at 25°C, this component offers a maximum power dissipation of 114 W (Tc). The device exhibits a low on-resistance of 360 mOhm at 5.5 A and 10 V (Vgs), with a gate charge (Qg) of 26 nC at 10 V and input capacitance (Ciss) of 790 pF at 50 V. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, this surface-mount device operates across a temperature range of -55°C to 150°C (TJ). Its robust construction makes it suitable for use in power supplies, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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