NDD60N360U1-35G
MOSFET N-CH 600V 11A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N360U1-35G is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at 25°C. With a maximum Rds On of 360mOhm at 5.5A and 10V Vgs, it offers efficient power handling with a power dissipation of 114W (Tc). The device utilizes MOSFET technology and is housed in an IPAK (TO-251-3 Short Leads) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 26 nC at 10V and input capacitance (Ciss) of 790 pF at 50V. This component is typically employed in power supply units, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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