NDD60N360U1-1G
MOSFET N-CH 600V 11A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD60N360U1-1G is a 600V N-Channel Power MOSFET designed for high-voltage switching applications. Featuring a low Rds(on) of 360mOhm at 5.5A and 10V Vgs, this device offers efficient power handling with a continuous drain current of 11A (Tc) and a maximum power dissipation of 114W (Tc). The NDD60N360U1-1G is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Key parameters include a gate charge of 26 nC at 10V and input capacitance of 790 pF at 50V. This MOSFET is utilized in power supply units, lighting, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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