NDD05N50ZT4G
MOSFET N-CH 500V 4.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD05N50ZT4G is a 500V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) of 4.7A at 25°C and a maximum power dissipation of 83W under similar conditions. With a drain-to-source voltage (Vdss) of 500V, it is suitable for high-voltage designs. The Rds(On) is specified at 1.5 Ohm maximum at 2.2A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 18.5 nC at 10V and an input capacitance (Ciss) of 530 pF at 25V. This device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, facilitating surface mounting. The operating temperature range is from -55°C to 150°C. This MOSFET is commonly utilized in industrial power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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