NDD05N50Z-1G
MOSFET N-CH 500V 4.7A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDD05N50Z-1G is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current of 4.7A (Tc) at 25°C and a maximum power dissipation of 83W (Tc). The Rds(on) is specified at 1.5 Ohm maximum at 2.2A, 10V. Key parameters include a Vgs(th) of 4.5V (max) at 50µA, a gate charge (Qg) of 18.5 nC (max) at 10V, and an input capacitance (Ciss) of 530 pF (max) at 25V. The operating temperature range is -55°C to 150°C. Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting, this MOSFET is suitable for use in various industrial and consumer electronics power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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