NDD04N60ZT4G
MOSFET N-CH 600V 4.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD04N60ZT4G is a 600V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current (Id) of 4.1A at 25°C and a maximum power dissipation of 83W (Tc). With a low on-resistance (Rds On) of 2Ohm at 2A and 10V, it ensures efficient power transfer. The device utilizes advanced MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 29 nC @ 10V and an input capacitance (Ciss) of 640 pF @ 25V. The NDD04N60ZT4G operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in tape and reel packaging. This MOSFET is commonly employed in power supply circuits, lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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