NDD04N60Z-1G
MOSFET N-CH 600V 4.1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD04N60Z-1G is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 4.1A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The on-resistance (Rds On) is a maximum of 2 Ohms at 2A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 29 nC (max) at 10V and an input capacitance (Ciss) of 640 pF (max) at 25V. The MOSFET operates from a drive voltage of 10V and has a Vgs(th) of 4.5V (max) at 50µA. It is packaged in a TO-251-3 Short Leads, IPAK (TO-251AA) for through-hole mounting. This component is suitable for use in power supply units, lighting, and motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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