NDD04N50ZT4G
MOSFET N-CH 500V 3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD04N50ZT4G is an N-Channel MOSFET designed for efficient power switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.7 Ohms at 1.5A and 10V gate-source voltage (Vgs), it offers low conduction losses. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 308 pF at 25V. The maximum power dissipation (Pd) is rated at 61W at 25°C (Tc), with an operating junction temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as industrial power supplies and lighting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 308 pF @ 25 V |