NDD04N50Z-1G
MOSFET N-CH 500V 3A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD04N50Z-1G is an N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 3A at 25°C (Tc), with a maximum power dissipation of 61W (Tc). The Rds(On) is specified at a maximum of 2.7 Ohms at 1.5A and 10V Vgs. Engineered with Metal Oxide technology, it offers a gate charge (Qg) of 12 nC (max) at 10V and input capacitance (Ciss) of 308 pF (max) at 25V. The NDD04N50Z-1G is housed in an IPAK (TO-251-3 Short Leads, IPAK, TO-251AA) package with a through-hole mounting type, suitable for operating temperatures ranging from -55°C to 150°C (TJ). This component finds application in power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 308 pF @ 25 V |
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