NDD03N80Z-1G
MOSFET N-CH 800V 2.9A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N80Z-1G is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 2.9 A at 25°C (Tc), this component offers a maximum On-Resistance (Rds On) of 4.5 Ohms at 1.2 A and 10 V. With a gate charge of 17 nC (max) at 10 V and input capacitance (Ciss) of 440 pF (max) at 25 V, it is suitable for efficient switching operations. The device's power dissipation is rated at 96 W (Tc). Packaged in a TO-251-3 Short Leads, IPAK (TO-251AA) configuration, it is designed for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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