NDD03N60ZT4G
MOSFET N-CH 600V 2.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N60ZT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 2.6 A at 25°C, with a maximum power dissipation of 61 W. The Rds(On) is specified at 3.6 Ohms maximum at 1.2 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 12 nC maximum at 10 V and input capacitance (Ciss) of 312 pF maximum at 25 V. The device utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab) surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±30 V. This MOSFET is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 25 V |
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