NDD03N60Z-1G
MOSFET N-CH 600V 2.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N60Z-1G is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 3.6 Ohms maximum at 1.2A and 10V gate drive, with a continuous drain current capability of 2.6A at 25°C (Tc). The IPAK package provides a compact through-hole mounting solution suitable for demanding thermal environments, dissipating up to 61W (Tc). Key parameters include a gate charge of 12 nC at 10V and input capacitance of 312 pF at 25V. The NDD03N60Z-1G is fabricated using advanced MOSFET technology and is suitable for use in power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 25 V |
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