NDD03N50ZT4G
MOSFET N-CH 500V 2.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NDD03N50ZT4G is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.3 Ohms at 1.15A and 10V Vgs, it offers efficient switching characteristics. The device has a gate charge (Qg) of 16 nC maximum at 10V and an input capacitance (Ciss) of 329 pF maximum at 25V. Rated for 58W (Tc) power dissipation, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 329 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
