NDD03N50Z-1G
MOSFET N-CH 500V 2.6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N50Z-1G is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 2.6 A at 25°C with a maximum power dissipation of 58 W (Tc). The Rds On is specified at a maximum of 3.3 Ohm at 1.15 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 10 nC at 10 V and an input capacitance (Ciss) of 274 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-251-3 Short Leads, IPAK (TO-251AA) package suitable for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 25 V |
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