NDD03N40ZT4G
MOSFET N-CH 400V 2.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N40ZT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 2.1A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.4 Ohms at 600mA and 10V gate drive, it offers low conduction losses. The device has a maximum power dissipation of 37W at 25°C (Tc). Key parameters include a gate charge (Qg) of 6.6 nC at 10V and an input capacitance (Ciss) of 140 pF at 50V. The NDD03N40ZT4G utilizes MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component is suitable for use in various industrial applications, including power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 50 V |
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