NDD03N40Z-1G
MOSFET N-CH 400V 2.1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD03N40Z-1G is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current handling. This device features a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 2.1A at 25°C. With a maximum power dissipation of 37W (Tc), it is suitable for power supply units, lighting, and motor control applications. The NDD03N40Z-1G exhibits a maximum Rds(On) of 3.4 Ohms at 600mA and 10V, with specified gate charge (Qg) of 6.6 nC and input capacitance (Ciss) of 140 pF at 50V. It operates within a temperature range of -55°C to 150°C and is available in a TO-251-3 Short Leads, IPAK package, commonly referred to as TO-251AA. This through-hole mounted component utilizes Metal Oxide technology.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 50 V |
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