NDD02N60ZT4G
MOSFET N-CH 600V 2.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NDD02N60ZT4G is a 600 V N-Channel MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 2.2A (Tc) and a maximum power dissipation of 57W (Tc). The Rds On is specified at a maximum of 4.8 Ohms at 1A, 10V. With a gate charge of 16 nC @ 10 V and input capacitance of 325 pF @ 25 V, it offers optimized switching characteristics. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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