NDD02N60Z-1G
MOSFET N-CH 600V 2.2A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD02N60Z-1G is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-251AA packaged device offers a continuous drain current of 2.2A (Tc) and a maximum power dissipation of 57W (Tc). Key electrical characteristics include a Drain to Source Voltage (Vdss) of 600V, a maximum Rds(on) of 4.8 Ohms at 1A and 10V gate drive, and a typical gate charge (Qg) of 10.1 nC. The input capacitance (Ciss) is rated at a maximum of 274 pF at 25V. This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications. It features a standard IPAK package with through-hole mounting capabilities and operates across a temperature range of -55°C to 150°C. The maximum gate-source voltage is ±30V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 25 V |
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