NDD02N40T4G
MOSFET N-CH 400V 1.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD02N40T4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 1.7 A at 25°C, with a maximum power dissipation of 39 W (Tc). The Rds On is specified at a maximum of 5.5 Ohms at 220 mA and 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 5.5 nC maximum at 10 V and an input capacitance (Ciss) of 121 pF maximum at 25 V. It operates reliably across a wide temperature range of -55°C to 150°C (TJ). The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting. This MOSFET is commonly utilized in industrial, automotive, and consumer electronics power management systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 220mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 121 pF @ 25 V |
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