NDD01N60T4G
MOSFET N-CH 600V 1.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD01N60T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 1.5A at 25°C, with a maximum power dissipation of 46W (Tc). The Rds On specification is 8.5 Ohms maximum at an Id of 200mA and Vgs of 10V. Key parameters include a Gate Charge (Qg) of 7.2 nC maximum at 10V and an input capacitance (Ciss) of 160 pF maximum at 25V. The NDD01N60T4G utilizes Metal Oxide technology and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivered on tape and reel. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum Gate-to-Source Voltage (Vgs) of ±30V. This component is commonly found in power supply units and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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