NDD01N60-1G
MOSFET N-CH 600V 1.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NDD01N60-1G is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 8.5 Ohms maximum at 200mA and 10V gate drive, coupled with a continuous drain current capability of 1.5A (Tc). With a maximum power dissipation of 46W (Tc), it is suitable for demanding thermal environments. The TO-251-3 Short Leads, IPAK package facilitates through-hole mounting. Key electrical parameters include a gate charge of 7.2 nC (max) at 10V and input capacitance of 160 pF (max) at 25V. This component is commonly utilized in power supplies, lighting, and industrial motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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